PSMN004-60B Specs and Replacement

Type Designator: PSMN004-60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: D2PAK

PSMN004-60B substitution

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PSMN004-60B datasheet

 ..1. Size:712K  nxp
 psmn004-60b.pdf pdf_icon

PSMN004-60B

PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒

 6.1. Size:105K  philips
 psmn004-25b p 4.pdf pdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) 4 m (VGS = 10 V) g RDS(ON) 5 m (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX pr... See More ⇒

 6.2. Size:294K  philips
 psmn004-36b.pdf pdf_icon

PSMN004-60B

PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat... See More ⇒

 6.3. Size:96K  philips
 psmn004-55w.pdf pdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V) g RDS(ON) 4.5 m (VGS = 5 V) s RDS(ON) 5 ... See More ⇒

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Detailed specifications: PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN, PMZ270XN, PMZ350XN, PMZ390UN, PMZ760SN, SI2302, PSMN005-30K, PSMN005-75B, PSMN006-20K, PSMN008-75B, PSMN009-100B, PSMN009-100P, PSMN011-30YL, PSMN011-80YS

Keywords - PSMN004-60B MOSFET specs

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