All MOSFET. PSMN004-60B Datasheet

 

PSMN004-60B Datasheet and Replacement


   Type Designator: PSMN004-60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: D2PAK
 

 PSMN004-60B substitution

   - MOSFET ⓘ Cross-Reference Search

 

PSMN004-60B Datasheet (PDF)

 ..1. Size:712K  nxp
psmn004-60b.pdf pdf_icon

PSMN004-60B

PSMN004-60BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 15 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 6.1. Size:105K  philips
psmn004-25b p 4.pdf pdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistanceRDS(ON) 4 m (VGS = 10 V)gRDS(ON) 5 m (VGS = 5 V)sGENERAL DESCRIPTIONSiliconMAX pr

 6.2. Size:294K  philips
psmn004-36b.pdf pdf_icon

PSMN004-60B

PSMN004-36P/36BN-channel enhancement mode field-effect transistorRev. 01 19 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN004-36P in SOT78 (TO-220AB)PSMN004-36B in SOT404 (D2-PAK).2. Features Very low on-state resistance Fast switching.3. Applicat

 6.3. Size:96K  philips
psmn004-55w.pdf pdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V)gRDS(ON) 4.5 m (VGS = 5 V)sRDS(ON) 5

Datasheet: PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , PMZ390UN , PMZ760SN , IRFZ46N , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P , PSMN011-30YL , PSMN011-80YS .

History: AP9962AGM | SQ3457EV | IRFP4232PBF | 2SK2735S | 2SK2816 | 3N80G-TF3-T | 3N80G-TA3-T

Keywords - PSMN004-60B MOSFET datasheet

 PSMN004-60B cross reference
 PSMN004-60B equivalent finder
 PSMN004-60B lookup
 PSMN004-60B substitution
 PSMN004-60B replacement

 

 
Back to Top

 


 
.