Справочник MOSFET. PSMN004-60B

 

PSMN004-60B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN004-60B
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для PSMN004-60B

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN004-60B Datasheet (PDF)

 ..1. Size:712K  nxp
psmn004-60b.pdfpdf_icon

PSMN004-60B

PSMN004-60BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 15 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 6.1. Size:105K  philips
psmn004-25b p 4.pdfpdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistanceRDS(ON) 4 m (VGS = 10 V)gRDS(ON) 5 m (VGS = 5 V)sGENERAL DESCRIPTIONSiliconMAX pr

 6.2. Size:294K  philips
psmn004-36b.pdfpdf_icon

PSMN004-60B

PSMN004-36P/36BN-channel enhancement mode field-effect transistorRev. 01 19 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN004-36P in SOT78 (TO-220AB)PSMN004-36B in SOT404 (D2-PAK).2. Features Very low on-state resistance Fast switching.3. Applicat

 6.3. Size:96K  philips
psmn004-55w.pdfpdf_icon

PSMN004-60B

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V)gRDS(ON) 4.5 m (VGS = 5 V)sRDS(ON) 5

Другие MOSFET... PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , PMZ390UN , PMZ760SN , IRFZ46N , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P , PSMN011-30YL , PSMN011-80YS .

History: PP2G10AT | 2SK1909 | 2SK1968 | LBSS123LT1G | LSD55R140GF | CS20N60V | RSR020P03TL

 

 
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