PSMN009-100P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN009-100P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de PSMN009-100P MOSFET

- Selecciónⓘ de transistores por parámetros

 

PSMN009-100P datasheet

 ..1. Size:771K  nxp
 psmn009-100p.pdf pdf_icon

PSMN009-100P

PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 3.1. Size:92K  philips
 psmn009-100w.pdf pdf_icon

PSMN009-100P

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) 9 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 3.2. Size:685K  nxp
 psmn009-100b.pdf pdf_icon

PSMN009-100P

PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

 7.1. Size:271K  philips
 psmn009 100p 100b-01.pdf pdf_icon

PSMN009-100P

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications

MOSTRAR MÁS

Otros transistores... PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K, PSMN005-75B, PSMN006-20K, PSMN008-75B, PSMN009-100B, STF13NM60N, PSMN011-30YL, PSMN011-80YS, PSMN012-100YS, PSMN012-60YS, PSMN012-80PS, PSMN013-100BS, PSMN013-100ES, PSMN013-100PS