PSMN009-100P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PSMN009-100P Datasheet (PDF)

..1. Size:771K nxp
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PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

3.1. Size:92K philips
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Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

3.2. Size:685K nxp
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PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

7.1. Size:271K philips
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PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications

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