PSMN009-100P Specs and Replacement

Type Designator: PSMN009-100P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO220AB

PSMN009-100P substitution

- MOSFET ⓘ Cross-Reference Search

 

PSMN009-100P datasheet

 ..1. Size:771K  nxp
 psmn009-100p.pdf pdf_icon

PSMN009-100P

PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒

 3.1. Size:92K  philips
 psmn009-100w.pdf pdf_icon

PSMN009-100P

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) 9 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil... See More ⇒

 3.2. Size:685K  nxp
 psmn009-100b.pdf pdf_icon

PSMN009-100P

PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic... See More ⇒

 7.1. Size:271K  philips
 psmn009 100p 100b-01.pdf pdf_icon

PSMN009-100P

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications ... See More ⇒

SHOW MORE

Detailed specifications: PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K, PSMN005-75B, PSMN006-20K, PSMN008-75B, PSMN009-100B, STF13NM60N, PSMN011-30YL, PSMN011-80YS, PSMN012-100YS, PSMN012-60YS, PSMN012-80PS, PSMN013-100BS, PSMN013-100ES, PSMN013-100PS

Keywords - PSMN009-100P MOSFET specs

 PSMN009-100P cross reference

 PSMN009-100P equivalent finder

 PSMN009-100P pdf lookup

 PSMN009-100P substitution

 PSMN009-100P replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.