PSMN009-100P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN009-100P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 230 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
Тип корпуса: TO220AB
- подбор MOSFET транзистора по параметрам
PSMN009-100P Datasheet (PDF)
psmn009-100p.pdf

PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap
psmn009-100w.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil
psmn009-100b.pdf

PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic
psmn009 100p 100b-01.pdf

PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SQJ474EP | STP80NE03L-06
History: SQJ474EP | STP80NE03L-06



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
3415 transistor | 072ne6pt | 2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor