PSMN015-110P Todos los transistores

 ..1. Size:91K  philips
 psmn015-110p.pdf

PSMN015-110P TrenchMOS Standard level FET Rev. 01 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Low gate charge. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4

 ..2. Size:685K  nxp
 psmn015-110p.pdf

PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 October 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 5.1. Size:101K  philips
 psmn015-100p 100b.pdf

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

 5.2. Size:153K  philips
 psmn015-100 series hg 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

 5.3. Size:707K  nxp
 psmn015-100p.pdf

PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 5.4. Size:720K  nxp
 psmn015-100yl.pdf

PSMN015-100YL N-channel 100 V, 15 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon