All MOSFET. PSMN015-110P Datasheet

 

PSMN015-110P MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN015-110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 110 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 75 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 90 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
   Package: TO220AB

 PSMN015-110P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN015-110P Datasheet (PDF)

 ..1. Size:91K  philips
psmn015-110p.pdf

PSMN015-110P
PSMN015-110P

PSMN015-110PTrenchMOS Standard level FETRev. 01 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Low gate charge.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4

 ..2. Size:685K  nxp
psmn015-110p.pdf

PSMN015-110P
PSMN015-110P

PSMN015-110PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 5.1. Size:101K  philips
psmn015-100p 100b.pdf

PSMN015-110P
PSMN015-110P

PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-

 5.2. Size:153K  philips
psmn015-100 series hg 3.pdf

PSMN015-110P
PSMN015-110P

DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

 5.3. Size:707K  nxp
psmn015-100p.pdf

PSMN015-110P
PSMN015-110P

PSMN015-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 06 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 5.4. Size:720K  nxp
psmn015-100yl.pdf

PSMN015-110P
PSMN015-110P

PSMN015-100YLN-channel 100 V, 15 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

Datasheet: PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , AO4407A , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS .

 

 
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