PSMN015-110P PDF and Equivalents Search

 

PSMN015-110P Specs and Replacement


   Type Designator: PSMN015-110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220AB
 

 PSMN015-110P substitution

   - MOSFET ⓘ Cross-Reference Search

 

PSMN015-110P datasheet

 ..1. Size:91K  philips
psmn015-110p.pdf pdf_icon

PSMN015-110P

PSMN015-110P TrenchMOS Standard level FET Rev. 01 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Low gate charge. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 ... See More ⇒

 ..2. Size:685K  nxp
psmn015-110p.pdf pdf_icon

PSMN015-110P

PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 October 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app... See More ⇒

 5.1. Size:101K  philips
psmn015-100p 100b.pdf pdf_icon

PSMN015-110P

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-... See More ⇒

 5.2. Size:153K  philips
psmn015-100 series hg 3.pdf pdf_icon

PSMN015-110P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma... See More ⇒

Detailed specifications: PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , IRFB7545 , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS .

Keywords - PSMN015-110P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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