PSMN015-110P - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN015-110P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 110 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN015-110P
PSMN015-110P Datasheet (PDF)
psmn015-110p.pdf

PSMN015-110PTrenchMOS Standard level FETRev. 01 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Low gate charge.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4
psmn015-110p.pdf

PSMN015-110PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn015-100p 100b.pdf

PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-
psmn015-100 series hg 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma
Другие MOSFET... PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , IRF520 , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS .



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