PSMN057-200B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN057-200B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 96 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Paquete / Cubierta: D2PAK
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PSMN057-200B Datasheet (PDF)
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Otros transistores... PSMN034-100PS , PSMN035-100LS , PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS , PSMN045-80YS , PSMN050-80PS , 10N60 , PSMN057-200P , PSMN059-150Y , PSMN063-150D , PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC .



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