PSMN057-200B MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN057-200B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 39 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 96 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: D2PAK
PSMN057-200B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN057-200B Datasheet (PDF)
psmn057-200b.pdf
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