All MOSFET. PSMN057-200B Datasheet

 

PSMN057-200B Datasheet and Replacement


   Type Designator: PSMN057-200B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: D2PAK
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PSMN057-200B Datasheet (PDF)

 ..1. Size:232K  nxp
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PSMN057-200B

PSMN057-200BN-channel TrenchMOS SiliconMAX standard level FET15 August 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be

 3.1. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN057-200B

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 3.2. Size:817K  nxp
psmn057-200p.pdf pdf_icon

PSMN057-200B

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 8.1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN057-200B

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVSP60R033P7HD4 | SDFE22JAB | STP25N06 | HCI70R360 | MTN15N50E3 | OSG60R099FEZF | DMP4050SSS

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