PSMN057-200B - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN057-200B
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN057-200B
PSMN057-200B Datasheet (PDF)
psmn057-200b.pdf

PSMN057-200BN-channel TrenchMOS SiliconMAX standard level FET15 August 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be
psmn057-200p.pdf

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn057-200p.pdf

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
psmn050-80ps.pdf

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
Другие MOSFET... PSMN034-100PS , PSMN035-100LS , PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS , PSMN045-80YS , PSMN050-80PS , 10N60 , PSMN057-200P , PSMN059-150Y , PSMN063-150D , PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC .
History: SVT035R5NMJ | FQU2N60CTU | HM4892B | SVT04230NR | FDD8896-F085
History: SVT035R5NMJ | FQU2N60CTU | HM4892B | SVT04230NR | FDD8896-F085



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