Справочник MOSFET. PSMN057-200B

 

PSMN057-200B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN057-200B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 39 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

PSMN057-200B Datasheet (PDF)

 ..1. Size:232K  nxp
psmn057-200b.pdfpdf_icon

PSMN057-200B

PSMN057-200BN-channel TrenchMOS SiliconMAX standard level FET15 August 2013 Product data sheet1. General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only.2. Features and be

 3.1. Size:172K  philips
psmn057-200p.pdfpdf_icon

PSMN057-200B

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 3.2. Size:817K  nxp
psmn057-200p.pdfpdf_icon

PSMN057-200B

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 8.1. Size:217K  philips
psmn050-80ps.pdfpdf_icon

PSMN057-200B

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

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History: ZVP0535A

 

 
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