PSMN3R0-60ES Todos los transistores

 ..1. Size:730K  nxp
 psmn3r0-60es.pdf

PSMN3R0-60ES N-channel 60 V 3.0 m standard level MOSFET in I2PAK. 3 June 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct

 ..2. Size:255K  inchange semiconductor
 psmn3r0-60es.pdf

isc N-Channel MOSFET Transistor PSMN3R0-60ES FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:218K  philips
 psmn3r0-60ps.pdf

PSMN3R0-60PS N-channel 60 V 3.0 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:207K  nxp
 psmn3r0-60bs.pdf

PSMN3R0-60BS N-channel 60 V 3.2 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 4.3. Size:815K  nxp
 psmn3r0-60ps.pdf

PSMN3R0-60PS N-channel 60 V 3.0 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.4. Size:255K  inchange semiconductor
 psmn3r0-60bs.pdf

isc N-Channel MOSFET Transistor PSMN3R0-60BS FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.5. Size:261K  inchange semiconductor
 psmn3r0-60ps.pdf

isc N-Channel MOSFET Transistor PSMN3R0-60PS FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general