PSMN3R0-60ES
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R0-60ES
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 306
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 100
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 130
nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003
Ohm
Тип корпуса:
I2PAK
Аналог (замена) для PSMN3R0-60ES
PSMN3R0-60ES
Datasheet (PDF)
..1. Size:730K nxp
psmn3r0-60es.pdf 
PSMN3R0-60ESN-channel 60 V 3.0 m standard level MOSFET in I2PAK.3 June 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduct
..2. Size:255K inchange semiconductor
psmn3r0-60es.pdf 
isc N-Channel MOSFET Transistor PSMN3R0-60ESFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
4.1. Size:218K philips
psmn3r0-60ps.pdf 
PSMN3R0-60PSN-channel 60 V 3.0 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
4.2. Size:207K nxp
psmn3r0-60bs.pdf 
PSMN3R0-60BSN-channel 60 V 3.2 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
4.3. Size:815K nxp
psmn3r0-60ps.pdf 
PSMN3R0-60PSN-channel 60 V 3.0 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
4.4. Size:255K inchange semiconductor
psmn3r0-60bs.pdf 
isc N-Channel MOSFET Transistor PSMN3R0-60BSFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
4.5. Size:261K inchange semiconductor
psmn3r0-60ps.pdf 
isc N-Channel MOSFET Transistor PSMN3R0-60PSFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
