PSMN3R7-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN3R7-25YLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 64 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 97 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.95 V
   Qgⓘ - Carga de la puerta: 21.6 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: LFPAK

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PSMN3R7-25YLC Datasheet (PDF)

..1. Size:349K philips
psmn3r7-25ylc.pdf

PSMN3R7-25YLCN-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

6.1. Size:345K philips
psmn3r7-30ylc.pdf

PSMN3R7-30YLCN-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

6.2. Size:286K nxp
psmn3r7-100bse.pdf

PSMN3R7-100BSEN-channel 100 V, 3.95 m, standard level MOSFET in D2PAK3 September 2018 Product data sheet1. General descriptionStandard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualifiedto 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very lowRDSon and a very strong linear-mode (SOA) performance.PSMN3R7-100BSE com

6.3. Size:258K inchange semiconductor
psmn3r7-100bse.pdf

Isc N-Channel MOSFET Transistor PSMN3R7-100BSEFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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