PSMN3R7-25YLC Specs and Replacement

Type Designator: PSMN3R7-25YLC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 97 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: LFPAK

PSMN3R7-25YLC substitution

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PSMN3R7-25YLC datasheet

 ..1. Size:349K  philips
 psmn3r7-25ylc.pdf pdf_icon

PSMN3R7-25YLC

PSMN3R7-25YLC N-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒

 6.1. Size:345K  philips
 psmn3r7-30ylc.pdf pdf_icon

PSMN3R7-25YLC

PSMN3R7-30YLC N-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒

 6.2. Size:286K  nxp
 psmn3r7-100bse.pdf pdf_icon

PSMN3R7-25YLC

PSMN3R7-100BSE N-channel 100 V, 3.95 m , standard level MOSFET in D2PAK 3 September 2018 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE com... See More ⇒

 6.3. Size:258K  inchange semiconductor
 psmn3r7-100bse.pdf pdf_icon

PSMN3R7-25YLC

Isc N-Channel MOSFET Transistor PSMN3R7-100BSE FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc... See More ⇒

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Detailed specifications: PSMN3R2-25YLC, PSMN3R2-30YLC, PSMN3R3-40YS, PSMN3R4-30PL, PSMN3R5-30LL, PSMN3R5-30YL, PSMN3R5-80ES, PSMN3R5-80PS, IRF520, PSMN3R7-30YLC, PSMN3R8-30LL, PSMN4R0-25YLC, PSMN4R0-30YL, PSMN4R0-40YS, PSMN4R1-30YLC, PSMN4R3-30PL, PSMN4R3-80ES

Keywords - PSMN3R7-25YLC MOSFET specs

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