PSMN3R7-25YLC
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN3R7-25YLC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 64
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.95
V
|Id|ⓘ - Maximum Drain Current: 97
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 21.6
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039
Ohm
Package:
LFPAK
PSMN3R7-25YLC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN3R7-25YLC
Datasheet (PDF)
..1. Size:349K philips
psmn3r7-25ylc.pdf
PSMN3R7-25YLCN-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
6.1. Size:345K philips
psmn3r7-30ylc.pdf
PSMN3R7-30YLCN-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
6.2. Size:286K nxp
psmn3r7-100bse.pdf
PSMN3R7-100BSEN-channel 100 V, 3.95 m, standard level MOSFET in D2PAK3 September 2018 Product data sheet1. General descriptionStandard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualifiedto 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very lowRDSon and a very strong linear-mode (SOA) performance.PSMN3R7-100BSE com
6.3. Size:258K inchange semiconductor
psmn3r7-100bse.pdf
Isc N-Channel MOSFET Transistor PSMN3R7-100BSEFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
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