PSMN3R7-25YLC. Аналоги и основные параметры
Наименование производителя: PSMN3R7-25YLC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 64 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 97 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN3R7-25YLC
- подборⓘ MOSFET транзистора по параметрам
PSMN3R7-25YLC даташит
psmn3r7-25ylc.pdf
PSMN3R7-25YLC N-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn3r7-30ylc.pdf
PSMN3R7-30YLC N-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn3r7-100bse.pdf
PSMN3R7-100BSE N-channel 100 V, 3.95 m , standard level MOSFET in D2PAK 3 September 2018 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE com
psmn3r7-100bse.pdf
Isc N-Channel MOSFET Transistor PSMN3R7-100BSE FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc
Другие IGBT... PSMN3R2-25YLC, PSMN3R2-30YLC, PSMN3R3-40YS, PSMN3R4-30PL, PSMN3R5-30LL, PSMN3R5-30YL, PSMN3R5-80ES, PSMN3R5-80PS, IRF520, PSMN3R7-30YLC, PSMN3R8-30LL, PSMN4R0-25YLC, PSMN4R0-30YL, PSMN4R0-40YS, PSMN4R1-30YLC, PSMN4R3-30PL, PSMN4R3-80ES
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