PSMN8R5-60YS Todos los transistores

 

PSMN8R5-60YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN8R5-60YS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: LFPAK
 

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PSMN8R5-60YS Datasheet (PDF)

 ..1. Size:241K  philips
psmn8r5-60ys.pdf pdf_icon

PSMN8R5-60YS

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFETRev. 01 22 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 ..2. Size:737K  nxp
psmn8r5-60ys.pdf pdf_icon

PSMN8R5-60YS

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFET22 July 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

 6.1. Size:250K  nxp
psmn8r5-100esf.pdf pdf_icon

PSMN8R5-60YS

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 6.2. Size:228K  nxp
psmn8r5-100xs.pdf pdf_icon

PSMN8R5-60YS

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

Otros transistores... PSMN7R0-60YS , PSMN7R5-25YLC , PSMN7R6-60PS , PSMN8R0-30YL , PSMN8R0-30YLC , PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , IRF640N , PSMN8R7-80PS , PSMN9R0-25YLC , PSMN9R0-30LL , PSMN9R0-30YL , PSMN9R1-30YL , PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC .

History: DH100P35E | MRF5007 | CS4N100VF

 

 
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