All MOSFET. PSMN8R5-60YS Datasheet

 

PSMN8R5-60YS MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN8R5-60YS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 76 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: LFPAK

 PSMN8R5-60YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN8R5-60YS Datasheet (PDF)

 ..1. Size:241K  philips
psmn8r5-60ys.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFETRev. 01 22 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 ..2. Size:737K  nxp
psmn8r5-60ys.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFET22 July 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

 6.1. Size:250K  nxp
psmn8r5-100esf.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 6.2. Size:228K  nxp
psmn8r5-100xs.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 6.3. Size:231K  nxp
psmn8r5-108es.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-108ESN-channel 108 V 8.5 m standard level MOSFET in I2PAK13 January 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 6.4. Size:220K  nxp
psmn8r5-100es.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 6.5. Size:258K  nxp
psmn8r5-100psf.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 6.6. Size:250K  nxp
psmn8r5-100ps.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 6.7. Size:301K  nxp
psmn8r5-40msd.pdf

PSMN8R5-60YS
PSMN8R5-60YS

PSMN8R5-40MSDN-channel 40 V, 8.5 m, standard level MOSFET in LFPAK33using NextPower-S3 technology10 February 2020 Product data sheet1. General description60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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