PSMN8R5-60YS - описание и поиск аналогов

 

PSMN8R5-60YS - Аналоги. Основные параметры


   Наименование производителя: PSMN8R5-60YS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 106 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN8R5-60YS

 

PSMN8R5-60YS технические параметры

 ..1. Size:241K  philips
psmn8r5-60ys.pdfpdf_icon

PSMN8R5-60YS

PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 ..2. Size:737K  nxp
psmn8r5-60ys.pdfpdf_icon

PSMN8R5-60YS

PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

 6.1. Size:250K  nxp
psmn8r5-100esf.pdfpdf_icon

PSMN8R5-60YS

PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 6.2. Size:228K  nxp
psmn8r5-100xs.pdfpdf_icon

PSMN8R5-60YS

PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi

Другие MOSFET... PSMN7R0-60YS , PSMN7R5-25YLC , PSMN7R6-60PS , PSMN8R0-30YL , PSMN8R0-30YLC , PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , IRFB4110 , PSMN8R7-80PS , PSMN9R0-25YLC , PSMN9R0-30LL , PSMN9R0-30YL , PSMN9R1-30YL , PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC .

 

 
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