PSMN8R5-60YS datasheet, аналоги, основные параметры
Наименование производителя: PSMN8R5-60YS 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 106 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: LFPAK
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Аналог (замена) для PSMN8R5-60YS
- подборⓘ MOSFET транзистора по параметрам
PSMN8R5-60YS даташит
psmn8r5-60ys.pdf
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
psmn8r5-60ys.pdf
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha
psmn8r5-100esf.pdf
PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf
PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi
Другие IGBT... PSMN7R0-60YS, PSMN7R5-25YLC, PSMN7R6-60PS, PSMN8R0-30YL, PSMN8R0-30YLC, PSMN8R0-40PS, PSMN8R2-80YS, PSMN8R3-40YS, 2N7002, PSMN8R7-80PS, PSMN9R0-25YLC, PSMN9R0-30LL, PSMN9R0-30YL, PSMN9R1-30YL, PSMN9R5-100PS, PSMN9R5-100XS, PSMN9R5-30YLC
Параметры MOSFET. Взаимосвязь и компромиссы
History: 2SK3004
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