PSMN9R0-30LL Todos los transistores

 ..1. Size:397K  philips
 psmn9r0-30ll.pdf

PSMN9R0-30LL N-channel QFN3333 30 V 9 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

 4.1. Size:384K  philips
 psmn9r0-30yl.pdf

PSMN9R0-30YL N-channel 30 V 8 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 6.1. Size:365K  nxp
 psmn9r0-25mlc.pdf

PSMN9R0-25MLC N-channel 25 V 8.65 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

 8.1. Size:220K  philips
 psmn9r5-100ps.pdf

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 8.2. Size:737K  nxp
 psmn9r5-100ps.pdf

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and con

 8.3. Size:226K  nxp
 psmn9r5-100bs.pdf

PSMN9R5-100BS N-channel 100 V 9.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 8.4. Size:919K  nxp
 psmn9r1-30yl.pdf

PSMN9R1-30YL N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK Rev. 2 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and b

 8.5. Size:902K  nxp
 psmn9r5-30ylc.pdf

PSMN9R5-30YLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 8.6. Size:365K  nxp
 psmn9r8-30mlc.pdf

PSMN9R8-30MLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene