PSMN9R0-30LL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN9R0-30LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: QFN3333
Аналог (замена) для PSMN9R0-30LL
PSMN9R0-30LL Datasheet (PDF)
psmn9r0-30ll.pdf

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn9r0-30yl.pdf

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn9r0-25mlc.pdf

PSMN9R0-25MLCN-channel 25 V 8.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
Другие MOSFET... PSMN8R0-30YL , PSMN8R0-30YLC , PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , PSMN8R5-60YS , PSMN8R7-80PS , PSMN9R0-25YLC , IRF3710 , PSMN9R0-30YL , PSMN9R1-30YL , PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC , SI2302DS , SI2304DS , IRF630FP .
History: SED30P30M | CTD06N017 | PE544JZ | CS9N80P | PZ2503HV | BRCS3710LDP
History: SED30P30M | CTD06N017 | PE544JZ | CS9N80P | PZ2503HV | BRCS3710LDP



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