All MOSFET. PSMN9R0-30LL Datasheet

 

PSMN9R0-30LL Datasheet and Replacement


   Type Designator: PSMN9R0-30LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: QFN3333
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PSMN9R0-30LL Datasheet (PDF)

 ..1. Size:397K  philips
psmn9r0-30ll.pdf pdf_icon

PSMN9R0-30LL

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

 4.1. Size:384K  philips
psmn9r0-30yl.pdf pdf_icon

PSMN9R0-30LL

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 6.1. Size:365K  nxp
psmn9r0-25mlc.pdf pdf_icon

PSMN9R0-30LL

PSMN9R0-25MLCN-channel 25 V 8.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 8.1. Size:220K  philips
psmn9r5-100ps.pdf pdf_icon

PSMN9R0-30LL

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - PSMN9R0-30LL MOSFET datasheet

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