PSMN9R1-30YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN9R1-30YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0091 Ohm
Paquete / Cubierta: LFPAK
- Selección de transistores por parámetros
PSMN9R1-30YL Datasheet (PDF)
psmn9r1-30yl.pdf

PSMN9R1-30YLN-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAKRev. 2 16 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and b
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn9r0-30ll.pdf

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn9r0-30yl.pdf

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP60NF06LFP | AP4002T | IRLI3803PBF | FDB0260N1007L | DMN2020LSN | TPA65R180D
History: STP60NF06LFP | AP4002T | IRLI3803PBF | FDB0260N1007L | DMN2020LSN | TPA65R180D



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