PSMN9R1-30YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN9R1-30YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0091 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN9R1-30YL MOSFET
PSMN9R1-30YL Datasheet (PDF)
psmn9r1-30yl.pdf

PSMN9R1-30YLN-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAKRev. 2 16 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and b
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn9r0-30ll.pdf

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn9r0-30yl.pdf

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
Otros transistores... PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , PSMN8R5-60YS , PSMN8R7-80PS , PSMN9R0-25YLC , PSMN9R0-30LL , PSMN9R0-30YL , P55NF06 , PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC , SI2302DS , SI2304DS , IRF630FP , IRF630M , STB100NF03L-03 .
History: 2SK1081 | FDS6688 | TPP80R300C | VBM165R02 | MSF10N80A | DHS020N04D | AM30N06-39D
History: 2SK1081 | FDS6688 | TPP80R300C | VBM165R02 | MSF10N80A | DHS020N04D | AM30N06-39D



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