PSMN9R1-30YL Specs and Replacement

Type Designator: PSMN9R1-30YL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: LFPAK

PSMN9R1-30YL substitution

- MOSFET ⓘ Cross-Reference Search

 

PSMN9R1-30YL datasheet

 ..1. Size:919K  nxp
psmn9r1-30yl.pdf pdf_icon

PSMN9R1-30YL

PSMN9R1-30YL N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK Rev. 2 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and b... See More ⇒

 8.1. Size:220K  philips
psmn9r5-100ps.pdf pdf_icon

PSMN9R1-30YL

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici... See More ⇒

 8.2. Size:397K  philips
psmn9r0-30ll.pdf pdf_icon

PSMN9R1-30YL

PSMN9R0-30LL N-channel QFN3333 30 V 9 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due ... See More ⇒

 8.3. Size:384K  philips
psmn9r0-30yl.pdf pdf_icon

PSMN9R1-30YL

PSMN9R0-30YL N-channel 30 V 8 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

Detailed specifications: PSMN8R0-40PS, PSMN8R2-80YS, PSMN8R3-40YS, PSMN8R5-60YS, PSMN8R7-80PS, PSMN9R0-25YLC, PSMN9R0-30LL, PSMN9R0-30YL, IRF3710, PSMN9R5-100PS, PSMN9R5-100XS, PSMN9R5-30YLC, SI2302DS, SI2304DS, IRF630FP, IRF630M, STB100NF03L-03

Keywords - PSMN9R1-30YL MOSFET specs

 PSMN9R1-30YL cross reference

 PSMN9R1-30YL equivalent finder

 PSMN9R1-30YL pdf lookup

 PSMN9R1-30YL substitution

 PSMN9R1-30YL replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility