PSMN9R1-30YL. Аналоги и основные параметры
Наименование производителя: PSMN9R1-30YL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0091 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN9R1-30YL
- подборⓘ MOSFET транзистора по параметрам
PSMN9R1-30YL даташит
psmn9r1-30yl.pdf
PSMN9R1-30YL N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK Rev. 2 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and b
psmn9r5-100ps.pdf
PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
psmn9r0-30ll.pdf
PSMN9R0-30LL N-channel QFN3333 30 V 9 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due
psmn9r0-30yl.pdf
PSMN9R0-30YL N-channel 30 V 8 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
Другие IGBT... PSMN8R0-40PS, PSMN8R2-80YS, PSMN8R3-40YS, PSMN8R5-60YS, PSMN8R7-80PS, PSMN9R0-25YLC, PSMN9R0-30LL, PSMN9R0-30YL, IRF3710, PSMN9R5-100PS, PSMN9R5-100XS, PSMN9R5-30YLC, SI2302DS, SI2304DS, IRF630FP, IRF630M, STB100NF03L-03
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Список транзисторов
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