Справочник MOSFET. PSMN9R1-30YL

 

PSMN9R1-30YL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN9R1-30YL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0091 Ohm
   Тип корпуса: LFPAK
 

 Аналог (замена) для PSMN9R1-30YL

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN9R1-30YL Datasheet (PDF)

 ..1. Size:919K  nxp
psmn9r1-30yl.pdfpdf_icon

PSMN9R1-30YL

PSMN9R1-30YLN-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAKRev. 2 16 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and b

 8.1. Size:220K  philips
psmn9r5-100ps.pdfpdf_icon

PSMN9R1-30YL

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 8.2. Size:397K  philips
psmn9r0-30ll.pdfpdf_icon

PSMN9R1-30YL

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

 8.3. Size:384K  philips
psmn9r0-30yl.pdfpdf_icon

PSMN9R1-30YL

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

Другие MOSFET... PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , PSMN8R5-60YS , PSMN8R7-80PS , PSMN9R0-25YLC , PSMN9R0-30LL , PSMN9R0-30YL , P55NF06 , PSMN9R5-100PS , PSMN9R5-100XS , PSMN9R5-30YLC , SI2302DS , SI2304DS , IRF630FP , IRF630M , STB100NF03L-03 .

History: BLS65R165-W | AM9435 | SM3419NHQA | RS1G180MN | SPP04N80C3 | CPH6311 | KQB2N50

 

 
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