APT1004R2BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT1004R2BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
Paquete / Cubierta: TO247

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APT1004R2BN Datasheet (PDF)

..1. Size:51K apt
apt1004r2bn.pdf

DTO-247GAPT1004RBN 1000V 4.4A 4.00SAPT1004R2BN 1000V 4.0A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1004RBN 1004R2BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C4.4 4.0AmpsIDM Pulsed Drain Current 1

5.1. Size:51K apt
apt1004r2kn.pdf

DTO-220GAPT1004RKN 1000V 3.6A 4.00SAPT1004R2KN 1000V 3.5A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004R2KN APT1004RKN UNITVDSS Drain-Source Voltage 1000 1000 VoltsID Continuous Drain Current3.5 3.6 Amps1IDM Pulsed Drain Current 14.0 14.4 Amps

6.1. Size:50K apt
apt1004rgn.pdf

DTO-257GAPT1004RGN 1000V 3.3A 4.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004RGN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C3.3AmpsIDM Pulsed Drain Current 113.2VGS Gate-Source Voltage30 VoltsTotal Po

6.2. Size:76K apt
apt1004rbnr.pdf

6.3. Size:50K apt
apt1004rcn.pdf

DTO-254GAPT1004RCN 1000V 3.6A 4.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C3.6AmpsIDM Pulsed Drain Current 114.4VGS Gate-Source Voltage30 VoltsTotal Po

6.4. Size:55K apt
apt1004rkn.pdf

DTO-220GAPT1004RKN 1000V 3.6A 4.00SAPT1004R2KN 1000V 3.5A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004R2KN APT1004RKN UNITVDSS Drain-Source Voltage 1000 1000 VoltsID Continuous Drain Current 3.5 3.6 Amps1IDM Pulsed Drain Current 14.0 14.4 AmpsV

Otros transistores... APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN , APT1003R5GN , APT10043JVR , APT1004R2AN , RU6888R , APT1004R2CN , APT1004R2GN , APT1004RAN , APT1004RBN , APT1004RCN , APT1004RGN , APT1004RKN , APT10050B2VR .

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