All MOSFET. APT1004R2BN Datasheet

 

APT1004R2BN Datasheet and Replacement


   Type Designator: APT1004R2BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO247
 

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APT1004R2BN Datasheet (PDF)

 ..1. Size:51K  apt
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APT1004R2BN

DTO-247GAPT1004RBN 1000V 4.4A 4.00SAPT1004R2BN 1000V 4.0A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1004RBN 1004R2BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C4.4 4.0AmpsIDM Pulsed Drain Current 1

 5.1. Size:51K  apt
 apt1004r2kn.pdf pdf_icon

APT1004R2BN

DTO-220GAPT1004RKN 1000V 3.6A 4.00SAPT1004R2KN 1000V 3.5A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004R2KN APT1004RKN UNITVDSS Drain-Source Voltage 1000 1000 VoltsID Continuous Drain Current3.5 3.6 Amps1IDM Pulsed Drain Current 14.0 14.4 Amps

 6.1. Size:50K  apt
 apt1004rgn.pdf pdf_icon

APT1004R2BN

DTO-257GAPT1004RGN 1000V 3.3A 4.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004RGN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C3.3AmpsIDM Pulsed Drain Current 113.2VGS Gate-Source Voltage30 VoltsTotal Po

 6.2. Size:76K  apt
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APT1004R2BN

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Datasheet: APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN , APT1003R5GN , APT10043JVR , APT1004R2AN , IRLB4132 , APT1004R2CN , APT1004R2GN , APT1004RAN , APT1004RBN , APT1004RCN , APT1004RGN , APT1004RKN , APT10050B2VR .

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