STD10PF06 Todos los transistores

 

STD10PF06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD10PF06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 16 nC

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: DPAK

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STD10PF06 Datasheet (PDF)

1.1. std10pf06-1 std10pf06t4.pdf Size:196K _st

STD10PF06
STD10PF06

STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED 1 CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX “-1") (Suffix

1.2. std10pf06.pdf Size:295K _st

STD10PF06
STD10PF06

STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED 1 CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX “-1") (Suffix

 4.1. std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf Size:1525K _st

STD10PF06
STD10PF06

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max ID 3 1 STD10P6F6 3 2 DPAK STF10P6F6 1 60 V 0.16 Ω 10 A TO-220FP STP10P6F6 TAB STU10P6F6 TAB • RDS(on) * Qg industry benchmark 3 2 •

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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