STD10PF06 PDF Specs and Replacement
Type Designator: STD10PF06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: DPAK
STD10PF06 substitution
STD10PF06 PDF Specs
std10pf06t4.pdf
STD10PF06T4 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒
std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char... See More ⇒
Detailed specifications: STB9NK70Z-1 , STB9NK90Z , STD100N3LF3 , STD10NF10 , STD10NM50N , STD10NM60N , STD10NM60ND , STD10NM65N , RFP50N06 , STD11NM50N , STD11NM60ND , STD120N4F6 , STD120N4LF6 , STD12N65M5 , STD12NF06 , STD12NF06L , STD12NF06T4 .
History: NCE1520K
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