All MOSFET. STD10PF06 Datasheet

 

STD10PF06 Datasheet and Replacement


   Type Designator: STD10PF06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DPAK
 

 STD10PF06 substitution

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STD10PF06 Datasheet (PDF)

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 std10pf06.pdf pdf_icon

STD10PF06

STD10PF06P-CHANNEL 60V - 0.18 - 10A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD10PF06 60 V

 0.1. Size:196K  st
 std10pf06-1 std10pf06t4.pdf pdf_icon

STD10PF06

STD10PF06P-CHANNEL 60V - 0.18 - 10A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD10PF06 60 V

 0.2. Size:870K  cn vbsemi
 std10pf06t4.pdf pdf_icon

STD10PF06

STD10PF06T4www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

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 std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf pdf_icon

STD10PF06

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID3STD10P6F613STF10P6F62DPAK-60 V 0.16 -10 A 1STP10P6F6TO-220FPSTU10P6F6TABTAB Very low on-resistance3 Very low gate char

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Datasheet: STB9NK70Z-1 , STB9NK90Z , STD100N3LF3 , STD10NF10 , STD10NM50N , STD10NM60N , STD10NM60ND , STD10NM65N , IRF2807 , STD11NM50N , STD11NM60ND , STD120N4F6 , STD120N4LF6 , STD12N65M5 , STD12NF06 , STD12NF06L , STD12NF06T4 .

History: IPD70R2K0CE

Keywords - STD10PF06 MOSFET datasheet

 STD10PF06 cross reference
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