STF22NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STF22NM60N
   Código: 22NM60N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 84 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: TO220FP

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STF22NM60N Datasheet (PDF)

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stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf

STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V

..2. Size:593K st
stb22nm60n stf22nm60n stp22nm60n.pdf

STB22NM60N, STF22NM60N, STP22NM60NDatasheetN-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTABVDS @31 RDS(on)max. IDOrder code2D PAKTjmax.321TO-220FPTAB STB22NM60NSTF22NM60N 650 V 0.22 16 A32 STP22NM60N1TO-220 100% avalanche testedD(2, TAB) Low input capacitance and gate charg

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stf2222a.pdf

STF2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTF2222A 20F SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSTF2907AAPPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAG

9.2. Size:206K st
2stf2280.pdf

2STF2280Low voltage high performance PNP power transistorPreliminary dataFeatures Low collector-emitter saturation voltage High current gain characteristic4 Fast switching speed321Applications DC-DC converter, voltage regulationSOT-89 General purpose switching equipmentDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor

9.3. Size:241K st
2stf2220.pdf

2STF2220High gain Low Voltage PNP power transistorFeatures Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 1.5 A continuous collector currentApplications Power management in portable equipmentSOT-89 Switching regulator in battery charger applicationsDescriptionThe device in a PNP transistor manufacturedFigure 1. Internal sche

9.4. Size:140K ssdi
stf22907gw.pdf

SFT22907GW Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Dual Microminiature Package DESIGNERS DATA SHEET 600 mA 60 Volts Part Number / Ordering Information 1/ Complimentary NPN & PNP SFT22907 GW __ Transistor Screening 2/ __ = Commercial

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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