STF22NM60N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STF22NM60N
Marking Code: 22NM60N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 84
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
TO220FP
STF22NM60N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF22NM60N
Datasheet (PDF)
..1. Size:818K st
stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf
STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V
..2. Size:593K st
stb22nm60n stf22nm60n stp22nm60n.pdf
STB22NM60N, STF22NM60N, STP22NM60NDatasheetN-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTABVDS @31 RDS(on)max. IDOrder code2D PAKTjmax.321TO-220FPTAB STB22NM60NSTF22NM60N 650 V 0.22 16 A32 STP22NM60N1TO-220 100% avalanche testedD(2, TAB) Low input capacitance and gate charg
9.1. Size:44K st
stf2222a.pdf
STF2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTF2222A 20F SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSTF2907AAPPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAG
9.2. Size:206K st
2stf2280.pdf
2STF2280Low voltage high performance PNP power transistorPreliminary dataFeatures Low collector-emitter saturation voltage High current gain characteristic4 Fast switching speed321Applications DC-DC converter, voltage regulationSOT-89 General purpose switching equipmentDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor
9.3. Size:241K st
2stf2220.pdf
2STF2220High gain Low Voltage PNP power transistorFeatures Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 1.5 A continuous collector currentApplications Power management in portable equipmentSOT-89 Switching regulator in battery charger applicationsDescriptionThe device in a PNP transistor manufacturedFigure 1. Internal sche
9.4. Size:140K ssdi
stf22907gw.pdf
SFT22907GW Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Dual Microminiature Package DESIGNERS DATA SHEET 600 mA 60 Volts Part Number / Ordering Information 1/ Complimentary NPN & PNP SFT22907 GW __ Transistor Screening 2/ __ = Commercial
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