STH180N10F3-2 Todos los transistores

 

STH180N10F3-2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STH180N10F3-2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 315 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 97.1 nS
   Cossⓘ - Capacitancia de salida: 786 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: H2PAK2

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STH180N10F3-2 Datasheet (PDF)

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sth180n10f3-2.pdf

STH180N10F3-2
STH180N10F3-2

STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-cha

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sth180n10f3-6.pdf

STH180N10F3-2
STH180N10F3-2

STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra

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sth185n10f3-6.pdf

STH180N10F3-2
STH180N10F3-2

STH185N10F3-6Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 packageDatasheet - production dataFeatures VDS RDS(on) max. IDOrder codeTABSTH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified1 Ultra low on-resistanceH2PAK-6 100% avalanche testedApplications Switchi

 9.2. Size:986K  st
sth185n10f3-2.pdf

STH180N10F3-2
STH180N10F3-2

STH185N10F3-2Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2AEC-Q101 qualified31 Ultra low on-resistanceH2PAK-2 100% avalanche testedApplications Swi

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