STH180N10F3-2 - аналоги, параметры транзистора

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STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in H PAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1 Internal schematic diagram Description This device is an N-cha

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STH180N10F3-6 N-channel 100 V, 3.9 m , 180 A, H PAK-6 STripFET III Power MOSFET Features RDS(on) Order codes VDSS ID TAB max. STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance 7 100% avalanche tested 1 Applications H2PAK-6 High current switching applications Description This device is an N-channel enhancement mode Figure 1. Internal schematic diagra

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STH185N10F3-6 Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 package Datasheet - production data Features VDS RDS(on) max. ID Order code TAB STH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified 1 Ultra low on-resistance H2PAK-6 100% avalanche tested Applications Switchi

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STH185N10F3-2 Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 package Datasheet - production data Features VDS RDS(on) max. ID Order code TAB STH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2 AEC-Q101 qualified 3 1 Ultra low on-resistance H2PAK-2 100% avalanche tested Applications Swi

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