All MOSFET. STH180N10F3-2 Datasheet

 

STH180N10F3-2 Datasheet and Replacement


   Type Designator: STH180N10F3-2
   Marking Code: 180N10F3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 315 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 114.6 nC
   tr ⓘ - Rise Time: 97.1 nS
   Cossⓘ - Output Capacitance: 786 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: H2PAK2
 

 STH180N10F3-2 substitution

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STH180N10F3-2 Datasheet (PDF)

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STH180N10F3-2

STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-cha

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sth180n10f3-6.pdf pdf_icon

STH180N10F3-2

STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra

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STH180N10F3-2

STH185N10F3-6Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 packageDatasheet - production dataFeatures VDS RDS(on) max. IDOrder codeTABSTH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified1 Ultra low on-resistanceH2PAK-6 100% avalanche testedApplications Switchi

 9.2. Size:986K  st
sth185n10f3-2.pdf pdf_icon

STH180N10F3-2

STH185N10F3-2Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2AEC-Q101 qualified31 Ultra low on-resistanceH2PAK-2 100% avalanche testedApplications Swi

Datasheet: STFI13NK60Z , STFI13NM60N , STFI20NK50Z , STFW12N120K5 , STFW3N150 , STFW4N150 , STFW60N65M5 , STFW6N120K3 , P55NF06 , STH210N75F6-2 , STH250N55F3-6 , STH260N6F6-2 , STH270N4F3-6 , STH300NH02L-6 , STH85N15F4-2 , STH90N15F4-2 , STI10N62K3 .

Keywords - STH180N10F3-2 MOSFET datasheet

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