STL18NM60N Todos los transistores

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 stl18nm60n.pdf

STL18NM60N N-channel 600 V, 0.26 typ., 12 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID S(2) Bottom view S(2) S(2) 12 A STL18NM60N 650 V 0.310 G(1) (1) D(3) 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge PowerFLAT 8

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 stl18n55m5.pdf

STL18N55M5 N-channel 550 V, 0.205 , 13 A PowerFLAT 8x8 HV MDmesh V Power MOSFET Features VDSS @ RDS(on) Type ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL18N55M5 600 V

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 stl18n65m2.pdf

STL18N65M2 N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - preliminary data Features VDS @ Order codes TJmax RDS(on) max ID STL18N65M2 715 V 0.365 8 A Extremely low gate charge 1 2 3 Excellent output capacitance (Coss) profile 4 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applicatio

 8.3. Size:1535K  st
 stl18n65m5.pdf

STL18N65M5 N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - preliminary data Features Order code VDS RDS(on)max. ID STL18N65M5 710 V 0.240 15 A(1) 1. The value is rated according to Rthj-case and limited by package. 1 Outstanding RDS(on)*area 2 3 Extremely large avalanche performance 4 Gate charge minimize

 8.4. Size:940K  st
 stl18n60m2.pdf

STL18N60M2 N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL18N60M2 650 V 0.308 9 A Extremely low gate charge 1 2 3 Lower RDS(on) x area vs previous generation 4 Low gate input resistance PowerFLAT 5x6 HV 100% avalanche