All MOSFET. STL18NM60N Datasheet

 

STL18NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL18NM60N
   Marking Code: 18NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: POWERFLAT8X8HV

 STL18NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL18NM60N Datasheet (PDF)

 ..1. Size:938K  st
 stl18nm60n.pdf

STL18NM60N STL18NM60N

STL18NM60NN-channel 600 V, 0.26 typ., 12 A MDmesh II Power MOSFET ina PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2) 12 A STL18NM60N 650 V 0.310 G(1) (1)D(3)1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate chargePowerFLAT 8

 8.1. Size:894K  st
 stl18n55m5.pdf

STL18NM60N STL18NM60N

STL18N55M5N-channel 550 V, 0.205 , 13 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL18N55M5 600 V

 8.2. Size:704K  st
 stl18n65m2.pdf

STL18NM60N STL18NM60N

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio

 8.3. Size:1535K  st
 stl18n65m5.pdf

STL18NM60N STL18NM60N

STL18N65M5N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max. IDSTL18N65M5 710 V 0.240 15 A(1)1. The value is rated according to Rthj-case and limited by package.1 Outstanding RDS(on)*area23 Extremely large avalanche performance4 Gate charge minimize

 8.4. Size:940K  st
 stl18n60m2.pdf

STL18NM60N STL18NM60N

STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQP4N90 | P0703BD | IXTL2N450

 

 
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