STL8N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STL8N65M5N-channel 650 V, 0.56 , 7 A MDmesh VPower MOSFET in PowerFLAT 5x5FeaturesVDSS @ RDS(on) Order code IDTJmax max 765STL8N65M5 710 V

STL8N10LF3Automotive-grade N-channel 100 V, 25 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL8N10LF3 100 V 35 m 7.8 A Designed for automotive applications and 1AEC-Q101 qualified23 Logic level VGS(th)4 175 C maximum junction temperature 100% avalanche rate

STL8N10F7N-channel 100 V, 0.017 typ., 35 A, STripFET F7 Power MOSFET in a PowerFLAT 3.3 x 3.3 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max ID PTOTSTL8N10F7 100 V 0.02 35 A 50 W Among the lowest RDS(on) on the market1 Excellent figure of merit (FoM)23 Low Crss/Ciss ratio for EMI immunity4 High avalanche ruggednessPow

STL8N80K5N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTL8N80K5 800 V 0.95 4.5 A Outstanding RDS(on)*area1 Worldwide best FOM (figure of merit)23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zene

STL8NH3LLN-channel 30 V, 0.012 , 8 A - PowerFLAT (3.3x3.3)ultra low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTL8NH3LL 30V