All MOSFET. STL8N65M5 Datasheet

 

STL8N65M5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL8N65M5
   Marking Code: 8N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: POWERFLAT5X5

 STL8N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL8N65M5 Datasheet (PDF)

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stl8n65m5.pdf

STL8N65M5
STL8N65M5

STL8N65M5N-channel 650 V, 0.56 , 7 A MDmesh VPower MOSFET in PowerFLAT 5x5FeaturesVDSS @ RDS(on) Order code IDTJmax max 765STL8N65M5 710 V

 9.1. Size:990K  st
stl8n10lf3.pdf

STL8N65M5
STL8N65M5

STL8N10LF3Automotive-grade N-channel 100 V, 25 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL8N10LF3 100 V 35 m 7.8 A Designed for automotive applications and 1AEC-Q101 qualified23 Logic level VGS(th)4 175 C maximum junction temperature 100% avalanche rate

 9.2. Size:613K  st
stl8n10f7.pdf

STL8N65M5
STL8N65M5

STL8N10F7N-channel 100 V, 0.017 typ., 35 A, STripFET F7 Power MOSFET in a PowerFLAT 3.3 x 3.3 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max ID PTOTSTL8N10F7 100 V 0.02 35 A 50 W Among the lowest RDS(on) on the market1 Excellent figure of merit (FoM)23 Low Crss/Ciss ratio for EMI immunity4 High avalanche ruggednessPow

 9.3. Size:1392K  st
stl8n80k5.pdf

STL8N65M5
STL8N65M5

STL8N80K5N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTL8N80K5 800 V 0.95 4.5 A Outstanding RDS(on)*area1 Worldwide best FOM (figure of merit)23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zene

 9.4. Size:321K  st
stl8nh3ll.pdf

STL8N65M5
STL8N65M5

STL8NH3LLN-channel 30 V, 0.012 , 8 A - PowerFLAT (3.3x3.3)ultra low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTL8NH3LL 30V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AM2321PE | IXTK140N30P

 

 
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