STL8N65M5 Specs and Replacement
Type Designator: STL8N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: POWERFLAT5X5
STL8N65M5 substitution
- MOSFET ⓘ Cross-Reference Search
STL8N65M5 datasheet
stl8n10lf3.pdf
STL8N10LF3 Automotive-grade N-channel 100 V, 25 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N10LF3 100 V 35 m 7.8 A Designed for automotive applications and 1 AEC-Q101 qualified 2 3 Logic level VGS(th) 4 175 C maximum junction temperature 100% avalanche rate... See More ⇒
stl8n10f7.pdf
STL8N10F7 N-channel 100 V, 0.017 typ., 35 A, STripFET F7 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID PTOT STL8N10F7 100 V 0.02 35 A 50 W Among the lowest RDS(on) on the market 1 Excellent figure of merit (FoM) 2 3 Low Crss/Ciss ratio for EMI immunity 4 High avalanche ruggedness Pow... See More ⇒
stl8n80k5.pdf
STL8N80K5 N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code VDS RDS(on)max. ID STL8N80K5 800 V 0.95 4.5 A Outstanding RDS(on)*area 1 Worldwide best FOM (figure of merit) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zene... See More ⇒
Detailed specifications: STL70N4LLF5, STL75N3LLZH5, STL75N8LF6, STL7NM60N, STL80N3LLH6, STL80N4LLF3, STL80N75F6, STL85N6F3, MMIS60R580P, STL90N3LLH6, STL9N3LLH5, STN1HNK60, STN1N20, STN1NF10, STN1NK60Z, STN1NK80Z, STN2NF10
Keywords - STL8N65M5 MOSFET specs
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