STP10NK70Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP10NK70Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 8.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 19 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de STP10NK70Z MOSFET
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STP10NK70Z datasheet
..1. Size:384K st
stp10nk70z.pdf 
STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK70Z 700 V
..2. Size:274K st
stp10nk70zfp stp10nk70z.pdf 
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V
..3. Size:280K st
stp10nk70z stp10nk70zfp.pdf 
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V
0.1. Size:253K inchange semiconductor
stp10nk70zfp.pdf 
isc N-Channel MOSFET Transistor STP10NK70ZFP FEATURES Drain Current I = 8.6A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max)@V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
7.1. Size:455K st
stp10nk80zfp stp10nk80z stw10nk80z.pdf 
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V
7.2. Size:439K st
stp10nk80z stp10nk80zfp stw10nk80z.pdf 
STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet production data Features TAB Type VDSS RDS(on) ID Pw STP10NK80Z 800V
7.3. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf 
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
7.4. Size:458K st
stp10nk80z.pdf 
STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V
7.5. Size:503K st
stp10nk50z.pdf 
STP10NK50Z N-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 package Datasheet obsolete product Features Order code VDSS RDS(on) max ID PTOT TAB STP10NK50Z 500 V
7.6. Size:528K st
stp10nk50z stf10nk50z.pdf 
STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V
7.7. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf 
STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V
7.8. Size:684K st
stp10nk60z.pdf 
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65 -10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK60Z 600 V
7.9. Size:938K st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf 
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
7.10. Size:201K inchange semiconductor
stp10nk60zfp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN
Otros transistores... STN3NF06L, STN3PF06, STN4NF03L, STN4NF06L, STN4NF20L, STP100NF04, STP10N62K3, STP10NK60Z, IRFB4110, STP10NK70ZFP, STP10NK80Z, STP10NK80ZFP, STP10NM50N, STP10NM60N, STP10NM60ND, STP10NM65N, STP11N52K3