All MOSFET. STP10NK70Z Datasheet

 

STP10NK70Z MOSFET. Datasheet pdf. Equivalent

Type Designator: STP10NK70Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 8.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 64 nC

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220

STP10NK70Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP10NK70Z Datasheet (PDF)

1.1. stp10nk70z stp10nk70zfp.pdf Size:280K _st

STP10NK70Z
STP10NK70Z

STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75? - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V <0.85 ? 8.6 A 110 W STP10NK70ZFP 700 V <0.85 ? 8.6 A 35 W EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 2 IMPROVED ESD CAPABILITY 1 1 TO-220 100% AVALANCHE TESTED TO-220FP GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAP

1.2. stp10nk70z.pdf Size:384K _st

STP10NK70Z
STP10NK70Z

STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75? - 8.6A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP10NK70Z 700 V < 0.85 ? 8.6 A 150 W STP10NK70ZFP 700 V < 0.85 ? 8.6 A 35 W TYPICAL RDS(on) = 0.75 ? EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 3 2 100% AVALANCHE RATED 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220

 3.1. stp10nk50z.pdf Size:503K _upd-mosfet

STP10NK70Z
STP10NK70Z

STP10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 package Datasheet — obsolete product Features Order code VDSS RDS(on) max ID PTOT TAB STP10NK50Z 500 V < 0.7 Ω 9 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 2 1 ■ Gate charge minimized TO-220 ■ Very low intrinsic capacitances ■ Very good manufacturi

3.2. stp10nk60zfp.pdf Size:938K _upd-mosfet

STP10NK70Z
STP10NK70Z

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W 2 1 1 TO-220FP STB10NK60ZT4 600 V < 0.75 Ω 10 A 115 W I2PAK STP10NK60Z 600 V < 0.75 Ω 10 A 11

 3.3. stp10nk60z.pdf Size:684K _st

STP10NK70Z
STP10NK70Z

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65?-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP10NK60Z 600 V < 0.75 ? 10 A 115 W STP10NK60ZFP 600 V < 0.75 ? 10 A 35 W STB10NK60Z 600 V < 0.75 ? 10 A 115 W 3 STB10NK60Z-1 600 V < 0.75 ? 10 A 115 W 2 1 STW10NK60Z 600 V < 0.75 ? 10 A 156 W TO-220 TO-220FP TYPICAL RDS(on) =

3.4. stp10nk80z.pdf Size:458K _st

STP10NK70Z
STP10NK70Z

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78? - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V < 0.90 ? 9 A 160 W STP10NK80ZFP 800 V < 0.90 ? 9 A 40 W STW10NK80Z 800 V < 0.90 ? 9 A 160 W 3 2 TYPICAL RDS(on) = 0.78 ? 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZE

 3.5. stb10nk60z stp10nk60z stw10nk60z.pdf Size:858K _st

STP10NK70Z
STP10NK70Z

STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 ?, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V < 0.75 ? 10 A 115 W 2 1 TO-247 STB10NK60Z 600 V < 0.75 ? 10 A 115 W TO-262 STP10NK60Z 600 V < 0.75 ? 10 A 115 W 3 1 STP10NK60ZFP 600 V < 0.75 ? 10 A 35 W TO-263 STW10NK60Z 600 V

3.6. stp10nk80zfp stp10nk80z stw10nk80z.pdf Size:455K _st

STP10NK70Z
STP10NK70Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78? - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V <0.90? 9A 160 W 3 2 3 1 2 STW10NK80Z 800V <0.90? 9A 160 w 1 TO-220 TO-220FP STP10NK80ZFP 800V <0.90? 9A 40 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low int

3.7. stp10nk50z stf10nk50z.pdf Size:528K _st

STP10NK70Z
STP10NK70Z

STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55? - 9A TO-220 / TO-220FP Zener-Protected SuperMESHMOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V < 0.7 ? 9 A 125 W STF10NK50Z 500 V < 0.7 ? 9 A(*) 30 W TYPICAL RDS(on) = 0.55 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES

3.8. stp10nk60zfp.pdf Size:201K _inchange_semiconductor

STP10NK70Z
STP10NK70Z

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATIN

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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