STP210N75F6
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP210N75F6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 75
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 120
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70
nS
Cossⓘ - Capacitancia
de salida: 1060
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037
Ohm
Paquete / Cubierta:
TO220
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STP210N75F6
Datasheet (PDF)
..1. Size:687K st
stp210n75f6.pdf 
STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V
7.1. Size:609K st
stp210nf02.pdf 
STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V
9.1. Size:197K st
stp21n06.pdf 
STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V
9.2. Size:383K st
stp21n06l.pdf 
STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V
9.3. Size:561K st
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf 
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
9.4. Size:564K st
stb21nm60n-1 stb21nm60n stf21nm60n stp21nm60n stw21nm60n.pdf 
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
9.7. Size:1389K st
stb21nm60nd stf21nm60nd stp21nm60nd stw21nm60nd.pdf 
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N
9.8. Size:197K st
stp21n05.pdf 
STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N05L 50 V
9.9. Size:1270K st
stb21n65m5 stf21n65m5 sti21n65m5 stp21n65m5 stw21n65m5.pdf 
STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V
9.10. Size:383K st
stp21n05l.pdf 
STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N05L 50 V
9.11. Size:454K st
stb21nm50n-1 stb21nm50n stf21nm50n stp21nm50n.pdf 
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
9.12. Size:507K st
stb21n90k5 stf21n90k5 stp21n90k5 stw21n90k5.pdf 
STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V
Otros transistores... STP20NF20
, STP20NK50Z
, STP20NM50
, STP20NM50FD
, STP20NM60
, STP20NM60FD
, STP20NM60FP
, STP20NM65N
, IRF730
, STP21N65M5
, STP21N90K5
, STP21NM60ND
, STP22NF03L
, STP22NM60N
, STP22NS25Z
, STP23NM50N
, STP23NM60ND
.