STP210N75F6 Specs and Replacement

Type Designator: STP210N75F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO220

STP210N75F6 substitution

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STP210N75F6 datasheet

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stp210n75f6.pdf pdf_icon

STP210N75F6

STP210N75F6 N-channel 75 V, 3 m , 120 A TO-220 STripFET VI DeepGATE Power MOSFET Features Order code VDSS RDS(on) max ID STP210N75F6 75 V ... See More ⇒

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stp210nf02.pdf pdf_icon

STP210N75F6

STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 - 120A D PAK/I PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE VDSS RDS(on) ID STB210NF02/-1 20 V ... See More ⇒

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stp21n06.pdf pdf_icon

STP210N75F6

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N06L 60 V ... See More ⇒

 9.2. Size:383K  st
stp21n06l.pdf pdf_icon

STP210N75F6

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N06L 60 V ... See More ⇒

Detailed specifications: STP20NF20, STP20NK50Z, STP20NM50, STP20NM50FD, STP20NM60, STP20NM60FD, STP20NM60FP, STP20NM65N, AO4468, STP21N65M5, STP21N90K5, STP21NM60ND, STP22NF03L, STP22NM60N, STP22NS25Z, STP23NM50N, STP23NM60ND

Keywords - STP210N75F6 MOSFET specs

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