STP210N75F6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP210N75F6
Marking Code: 210N75F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 171 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1060 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO220
STP210N75F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP210N75F6 Datasheet (PDF)
stp210n75f6.pdf
STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V
stp210nf02.pdf
STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V
stp21n06.pdf
STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V
stp21n06l.pdf
STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stb21nm60n-1 stb21nm60n stf21nm60n stp21nm60n stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stp21nm60nd stf21nm60nd stb21nm60nd sti21nm60nd stw21nm60nd.pdf
STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V
stp21nm50n stf21nm50n stb21nm50n stb21nm50n-1 stw21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stb21nm60nd stf21nm60nd stp21nm60nd stw21nm60nd.pdf
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N
stp21n05.pdf
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STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V
stp21n05l.pdf
STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N05L 50 V
stb21nm50n-1 stb21nm50n stf21nm50n stp21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stb21n90k5 stf21n90k5 stp21n90k5 stw21n90k5.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KP505G
History: KP505G
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