All MOSFET. STP210N75F6 Datasheet

 

STP210N75F6 Datasheet and Replacement


   Type Designator: STP210N75F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO220
 

 STP210N75F6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STP210N75F6 Datasheet (PDF)

 ..1. Size:687K  st
stp210n75f6.pdf pdf_icon

STP210N75F6

STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V

 7.1. Size:609K  st
stp210nf02.pdf pdf_icon

STP210N75F6

STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V

 9.1. Size:197K  st
stp21n06.pdf pdf_icon

STP210N75F6

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V

 9.2. Size:383K  st
stp21n06l.pdf pdf_icon

STP210N75F6

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V

Datasheet: STP20NF20 , STP20NK50Z , STP20NM50 , STP20NM50FD , STP20NM60 , STP20NM60FD , STP20NM60FP , STP20NM65N , IRFP064N , STP21N65M5 , STP21N90K5 , STP21NM60ND , STP22NF03L , STP22NM60N , STP22NS25Z , STP23NM50N , STP23NM60ND .

History: IRF6709S2 | HM4453A | APT10M07JVFR | SPC16N65G | CS13N60F | D25N10 | GM2301

Keywords - STP210N75F6 MOSFET datasheet

 STP210N75F6 cross reference
 STP210N75F6 equivalent finder
 STP210N75F6 lookup
 STP210N75F6 substitution
 STP210N75F6 replacement

 

 
Back to Top

 


 
.