APT20M45BVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M45BVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO247

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APT20M45BVR datasheet

 ..1. Size:92K  apt
 apt20m45bvr.pdf pdf_icon

APT20M45BVR

APT20M45BVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 ..2. Size:375K  inchange semiconductor
 apt20m45bvr.pdf pdf_icon

APT20M45BVR

isc N-Channel MOSFET Transistor APT20M45BVR FEATURES Drain Current I =56A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.045 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 4.1. Size:94K  apt
 apt20m45bvfr.pdf pdf_icon

APT20M45BVR

APT20M45BVFR 200V 56A 0.045 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 4.2. Size:375K  inchange semiconductor
 apt20m45bvfr.pdf pdf_icon

APT20M45BVR

isc N-Channel MOSFET Transistor APT20M45BVFR FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.045 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

MOSTRAR MÁS

Otros transistores... APT20M22LVR, APT20M26WVR, APT20M38BVFR, APT20M38BVR, APT20M38SVR, APT20M40BVR, APT20M42HVR, APT20M45BVFR, IRF740, APT20M45SVFR, APT20M45SVR, APT30M19JVFR, APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR