All MOSFET. APT20M45BVR Datasheet

 

APT20M45BVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT20M45BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO247

 APT20M45BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M45BVR Datasheet (PDF)

 ..1. Size:92K  apt
 apt20m45bvr.pdf

APT20M45BVR APT20M45BVR

APT20M45BVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 ..2. Size:375K  inchange semiconductor
 apt20m45bvr.pdf

APT20M45BVR APT20M45BVR

isc N-Channel MOSFET Transistor APT20M45BVRFEATURESDrain Current I =56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 4.1. Size:94K  apt
 apt20m45bvfr.pdf

APT20M45BVR APT20M45BVR

APT20M45BVFR200V 56A 0.045POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 4.2. Size:375K  inchange semiconductor
 apt20m45bvfr.pdf

APT20M45BVR APT20M45BVR

isc N-Channel MOSFET Transistor APT20M45BVFRFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.1. Size:97K  apt
 apt20m45svfr.pdf

APT20M45BVR APT20M45BVR

APT20M45SVFR200V 56A 0.045POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 6.2. Size:95K  apt
 apt20m45svr.pdf

APT20M45BVR APT20M45BVR

APT20M45SVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

Datasheet: APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR , APT20M42HVR , APT20M45BVFR , IRF740 , APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR , APT30M40LVFR , APT30M40LVR .

 

 
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