APT30M70BVFR Todos los transistores

 

APT30M70BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M70BVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 882 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO247
 

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APT30M70BVFR datasheet

 ..1. Size:66K  apt
apt30m70bvfr.pdf pdf_icon

APT30M70BVFR

APT30M70BVFR 300V 48A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:376K  inchange semiconductor
apt30m70bvfr.pdf pdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVFR FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 4.1. Size:63K  apt
apt30m70bvr.pdf pdf_icon

APT30M70BVFR

APT30M70BVR 300V 48A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:376K  inchange semiconductor
apt30m70bvr.pdf pdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVR FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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