APT30M70BVFR Todos los transistores

 

APT30M70BVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M70BVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 882 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

APT30M70BVFR Datasheet (PDF)

 ..1. Size:66K  apt
apt30m70bvfr.pdf pdf_icon

APT30M70BVFR

APT30M70BVFR300V 48A 0.070POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:376K  inchange semiconductor
apt30m70bvfr.pdf pdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVFRFEATURESDrain Current I = 48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 4.1. Size:63K  apt
apt30m70bvr.pdf pdf_icon

APT30M70BVFR

APT30M70BVR300V 48A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:376K  inchange semiconductor
apt30m70bvr.pdf pdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVRFEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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History: PHT11N06LT | DMN2170U | 2SJ107 | APM9948J | SNN3530BNL | SI6925ADQ | ZXMS6005DGQ

 

 
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