Справочник MOSFET. APT30M70BVFR

 

APT30M70BVFR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT30M70BVFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 882 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

APT30M70BVFR Datasheet (PDF)

 ..1. Size:66K  apt
apt30m70bvfr.pdfpdf_icon

APT30M70BVFR

APT30M70BVFR300V 48A 0.070POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:376K  inchange semiconductor
apt30m70bvfr.pdfpdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVFRFEATURESDrain Current I = 48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 4.1. Size:63K  apt
apt30m70bvr.pdfpdf_icon

APT30M70BVFR

APT30M70BVR300V 48A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:376K  inchange semiconductor
apt30m70bvr.pdfpdf_icon

APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVRFEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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History: IXFT36N50P | AP4578GD | PJA3407 | UT100N03G-K08-5060-R | GP1M011A050XX | IRFR48ZPBF | 2SK2882

 

 
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