All MOSFET. APT30M70BVFR Datasheet

 

APT30M70BVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT30M70BVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 152 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 882 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247

 APT30M70BVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT30M70BVFR Datasheet (PDF)

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 apt30m70bvfr.pdf

APT30M70BVFR APT30M70BVFR

APT30M70BVFR300V 48A 0.070POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:376K  inchange semiconductor
 apt30m70bvfr.pdf

APT30M70BVFR APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVFRFEATURESDrain Current I = 48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 4.1. Size:63K  apt
 apt30m70bvr.pdf

APT30M70BVFR APT30M70BVFR

APT30M70BVR300V 48A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:376K  inchange semiconductor
 apt30m70bvr.pdf

APT30M70BVFR APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M70BVRFEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:69K  apt
 apt30m75bll.pdf

APT30M70BVFR APT30M70BVFR

APT30M75BLLAPT30M75SLL300V 44A 0.075WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

 7.2. Size:67K  apt
 apt30m75bfllg apt30m75sfllg.pdf

APT30M70BVFR APT30M70BVFR

APT30M75BFLLAPT30M75SFLL300V 44A 0.075BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

 7.3. Size:90K  apt
 apt30m75bllg apt30m75sllg.pdf

APT30M70BVFR APT30M70BVFR

APT30M75BLLAPT30M75SLL300V 44A 0.075RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalo

 7.4. Size:376K  inchange semiconductor
 apt30m75bll.pdf

APT30M70BVFR APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M75BLLFEATURESDrain Current I =44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.5. Size:376K  inchange semiconductor
 apt30m75bfll.pdf

APT30M70BVFR APT30M70BVFR

isc N-Channel MOSFET Transistor APT30M75BFLLFEATURESDrain Current I = 44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR , APT30M40LVFR , APT30M40LVR , IRF1404 , APT30M70BVR , APT30M85BVFR , APT30M85BVR , APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR .

History: STP30N05FI

 

 
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