STS10DN3LH5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STS10DN3LH5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 22 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO8

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STS10DN3LH5 Datasheet (PDF)

..1. Size:769K st
sts10dn3lh5.pdf

STS10DN3LH5Dual N-channel 30 V, 0.019 , 10 A, SO-8STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTS10DN3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargeSO-8 High avalanche ruggedness Low gate drive power lossesApplication Switching applicationsFigure 1. Interna

9.1. Size:135K st
sts10nf30l.pdf

STS10NF30LN - CHANNEL 30V - 0.011 - 10A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS10NF30L 30 V

9.2. Size:537K st
sts10p3llh6.pdf

STS10P3LLH6 P-channel 30 V, 0.01 typ., 10 A, STripFET H6 Power MOSFET in a SO-8 package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology,

9.3. Size:775K st
sts10n3lh5.pdf

STS10N3LH5N-channel 30 V, 0.019 , 10 A, SO-8STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargeSO-8 High avalanche ruggedness Low gate drive power lossesApplication Switching applicationsFigure 1. Internal schem

9.4. Size:224K st
sts10pf30l.pdf

STS10PF30LP-CHANNEL 30V - 0.012 - 10A SO-8STripFET II POWER MOSFETTable 1: General FeaturesFigure 1:PackageTYPE VDSS RDS(on) IDSTS10PF30L 30V

9.5. Size:367K st
sts10p4llf6.pdf

STS10P4LLF6P-channel 40 V, 0.013 typ., 10 A, STripFET VI DeepGATEPower MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max IDSTS10P4LLF6 40 V 0.017 10A RDS(on)* Qg industry benchmark4 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8Applications Switching applicationsDescriptionFigure 1.

9.6. Size:827K cn vbsemi
sts10pf30l.pdf

STS10PF30Lwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

9.7. Size:834K cn vbsemi
sts10p4llf6.pdf

STS10P4LLF6www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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