STS10DN3LH5 - описание и поиск аналогов

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 sts10dn3lh5.pdf 

STS10DN3LH5 Dual N-channel 30 V, 0.019 , 10 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STS10DN3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge SO-8 High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Interna

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 sts10nf30l.pdf 

STS10NF30L N - CHANNEL 30V - 0.011 - 10A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STS10NF30L 30 V

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 sts10p3llh6.pdf 

STS10P3LLH6 P-channel 30 V, 0.01 typ., 10 A, STripFET H6 Power MOSFET in a SO-8 package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology,

 9.3. Size:775K  st
 sts10n3lh5.pdf 

STS10N3LH5 N-channel 30 V, 0.019 , 10 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STS10N3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge SO-8 High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schem

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 sts10pf30l.pdf 

STS10PF30L P-CHANNEL 30V - 0.012 - 10A SO-8 STripFET II POWER MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STS10PF30L 30V

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 sts10p4llf6.pdf 

STS10P4LLF6 P-channel 40 V, 0.013 typ., 10 A, STripFET VI DeepGATE Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STS10P4LLF6 40 V 0.017 10A RDS(on)* Qg industry benchmark 4 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SO-8 Applications Switching applications Description Figure 1.

 9.6. Size:827K  cn vbsemi
 sts10pf30l.pdf 

STS10PF30L www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P

 9.7. Size:834K  cn vbsemi
 sts10p4llf6.pdf 

STS10P4LLF6 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD