STS10DN3LH5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STS10DN3LH5
Marking Code: 10DD3L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.6 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
STS10DN3LH5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS10DN3LH5 Datasheet (PDF)
sts10dn3lh5.pdf
STS10DN3LH5Dual N-channel 30 V, 0.019 , 10 A, SO-8STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTS10DN3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargeSO-8 High avalanche ruggedness Low gate drive power lossesApplication Switching applicationsFigure 1. Interna
sts10nf30l.pdf
STS10NF30LN - CHANNEL 30V - 0.011 - 10A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS10NF30L 30 V
sts10p3llh6.pdf
STS10P3LLH6 P-channel 30 V, 0.01 typ., 10 A, STripFET H6 Power MOSFET in a SO-8 package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology,
sts10n3lh5.pdf
STS10N3LH5N-channel 30 V, 0.019 , 10 A, SO-8STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargeSO-8 High avalanche ruggedness Low gate drive power lossesApplication Switching applicationsFigure 1. Internal schem
sts10pf30l.pdf
STS10PF30LP-CHANNEL 30V - 0.012 - 10A SO-8STripFET II POWER MOSFETTable 1: General FeaturesFigure 1:PackageTYPE VDSS RDS(on) IDSTS10PF30L 30V
sts10p4llf6.pdf
STS10P4LLF6P-channel 40 V, 0.013 typ., 10 A, STripFET VI DeepGATEPower MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max IDSTS10P4LLF6 40 V 0.017 10A RDS(on)* Qg industry benchmark4 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8Applications Switching applicationsDescriptionFigure 1.
sts10pf30l.pdf
STS10PF30Lwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P
sts10p4llf6.pdf
STS10P4LLF6www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
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